Activation energy for fluorine transport in amorphous silicon
نویسندگان
چکیده
The transport of ion-implanted F in amorphous Si is studied using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F is observed at temperatures in the range 600–700 °C. The measured F depth profiles are modeled using a simple Gaussian solution to the diffusion equation, and the diffusion coefficient is deduced at each temperature. An activation energy of 2.2 eV60.4 eV for F transport is extracted from an Arrhenius plot of the diffusion coefficients. It is shown that the F transport is influenced by implantation-induced defects. © 1999 American Institute of Physics. @S0003-6951~99!03249-0#
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